MG150J7KS50 |
RFQ for MG150J7KS50 |
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| Product | Manufacturers | Pack | D/C |
| MG150J7KS50 | - | MODULE | N/A |
Typical Application |
| ·The electrodes are isolated from case. ·High input impedance ·7 IGBTs built into 1 package. ·Enhancement-mode ·High speed type IGBT : Inverter stage : VCE (sat) = 2.8V (max) (@IC = 150A) : tf = 0.5µs (max) (@IC = 150A) : trr = 0.3µs (max) (@IF = 150A) ·Outline : TOSHIBA 2-110A1B ·Weight: 520g |
| Characteristics | Symbol | Rating | Unit | |
| Collector-emitter voltage | VCES | 600 | V | |
| Gate-emitter voltage | VGES | ±20 | V | |
| Collector current | DC | IC | 150 | A |
| 1ms | ICP | 300 | ||
| Forward current | DC | IF | 150 | A |
| 1ms | IFM | 300 | ||
| Total power dissipation (Tc=25°C) | PC | 320 | W | |
| Junction temperature | Tj | 150 | ||
| Storage temperature range | Tstg | −40 ~ 125 | ||
| Isolation voltage | VIsol | 2500 (AC 1 min.) |
V | |
| Screw torque (Terminal / mounting) | 3 / 3 | N`m | ||